基于正交电磁场的等离子体电子密度控制

Plasma electronic density manipulation based on orthogonal electromagnetic field

  • 摘要: 正交电磁场是一种极具应用前景的降低等离子体电子密度、消除再入通信黑障的控制方法。根据离子质量与动量的守恒原理,建立了正交电磁场控制的物理模型;通过与流体力学方程的比拟,应用隐式格式实现了物理模型的稳定求解。通过数值模拟研究了正交电磁场控制装置中外加电场强度、磁场强度等参数对等离子体电子密度控制效果的影响规律,发现:在电流及磁场作用下,洛伦兹力使得电子发生漂移,导致局部电子密度下降,出现电磁窗口;电压越高、磁场越强,控制效果越好;对于相同磁场,电压较低时,电子密度减小量与电压基本成线性关系,电压超过100 V后,两者关系的非线性逐渐增强。由此,本文制造了电子密度控制原理样机,并在等离子体实验平台中进行了实验,采用发射光谱法和微波干涉法测量诊断了等离子体的电子密度变化情况,在控制区内得到了局部低电子密度区,证实了洛伦兹力作用下等离子体的漂移以及对等离子体电子密度的控制作用。

     

    Abstract: Orthogonal electromagnetic field method is a promising manipulation technique for reducing plasma electronic density and alleviating reentry communication blackout. Based on the mass and momentum conservation of ions, the physical model of Orthogonal electromagnetic field control is established. By analogy with the equations of fluid dynamics, an implicit scheme is applied which enables stable solutions of the physical model. The impact of applied electric field intensity and magnetic field intensity in the Orthogonal electromagnetic field control device on the plasma electronic density control effects is investigated using numerical simulation. It is found that the Lorenz force produced by electricity current and magnetic field makes the electronic drift, which reduces the local electronic density and results in an electrical-magnetic window. Higher voltage and stronger magnetic fields can lead to better control effects. At a fixed magnetic field intensity, the electronic density depends linearly on the voltage when the voltage is not high, but nonlinearity rises gradually when the voltage exceeds 100 V. A prototype of the electronic density control device is made and tested in the plasma testing platform. The plasma electronic density is measured using methods of radiation light spectrum and microwave interferometry, and a local low-density region is identified within the control region, validating the plasma drift and control effect on the electronic density by the Lorenz force.

     

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